SI1050X-T1-GE3
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SI1050X-T1-GE3 datasheet
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МаркировкаSI1050X-T1-GE3
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ПроизводительSiliconix
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ОписаниеVishay Intertechnology SI1050X-T1-GE3 Continuous Drain Current Id: 1.34A Current - Continuous Drain (id) @ 25?° C: - Drain Source Voltage Vds: 8V Drain To Source Voltage (vdss): 8V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 11.6nC @ 5V ID_COMPONENTS: 2662029 Input Capacitance (ciss) @ Vds: 585pF @ 4V Mounting Type: Surface Mount On Resistance Rds(on): 120mohm Package / Case: SC-89-6, SOT-563F, SOT-666 Power - Max: 236mW Rds On (max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V Rds(on) Test Voltage Vgs: 5V Series: TrenchFET?® Threshold Voltage Vgs Typ: 5V Transistor Polarity: N Channel Vgs(th) (max) @ Id: 900mV @ 250?µA Other Names: SI1050X-T1-GE3TR
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Количество страниц8 шт.
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